A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy.

Nitrogen doping of 4H-SiC during vapor phase epitaxy is still lacking of a general model explaining the apparently contradictory trends obtained by different teams. In this paper, the evolutions of nitrogen incorporation (on both polar Si and C faces) as a function of the main growth parameters (C/Si ratio, temperature, pressure and growth rate) are reviewed and explained using a model based on surface exchanges between the gas phase and the uppermost 4H-SiC atomic layers. In this model, N incorporation is driven mainly by the transient formation of C vacancies, due to H2 etching, at the surface or near the surface. It is shown that all the growth parameters are influencing the probability of C vacancies formation in a similar manner as they do for N incorporation. The surface exchange model proposes a new framework for explaining the experimental results even beyond the commonly accepted reactor type dependency.

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.

We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene.

The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-SiC(111) on a 2° off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.

AlN hollow-nanofilaments by electrospinning.

We present for the first time an original method to elaborate AlN nanofilaments (NFs) by using a preceramic-based electrospinning process. Initially, an Al-containing precursor (poly(ethylimino)alane) is mixed with an organic spinnable polymer to be electrospun and generate polymeric filaments with a homogeneous diameter. A ceramization step at 1000 °C under ammonia and a crystallization step at 1400 °C under nitrogen are performed to get the final product made of AlN NFs with a diameter ranging from 150 to 200 nm. Studies carried out by high resolution electron microscopy and 3D tomography show their regular morphology, with high chemical purity and polycrystalline nature.

Photonic crystal cavities in cubic (3C) polytype silicon carbide films.

We present the design, fabrication, and characterization of high quality factor (Q ~10(3)) and small mode volume (V ~0.75 (λ/n)(3)) planar photonic crystal cavities from cubic (3C) thin films (thickness ~200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1.25 - 1.6 µm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

Measurements of the negative refractive index of sub-diffraction waves propagating in an indefinite permittivity medium.

An indefinite permittivity medium (IPM) has been fabricated and optically characterized in mid-infrared spectral range (10.7 µm-11.3 µm). Phase and amplitude transmission measurements reveal two remarkable properties of IPMs: (i) transmission of sub-diffraction waves (as short as λ/4) can exceed those of diffraction-limited ones, and (ii) sub-diffraction waves can propagate with negative refractive index. We describe a novel double-detector optical technique relying on the interference between sub-diffraction and diffraction-limited waves for accurate measurement of the transmission amplitude and phase of the former.

Highly confined hybrid spoof surface plasmons in ultrathin metal-dielectric heterostructures.

Highly confined "spoof" surface plasmons (SSPs) are theoretically predicted to exist in a perforated metal film coated with a thin dielectric layer. Strong modes confinement results from the additional waveguiding by the layer. Spectral characteristics, field distribution, and lifetime of these SSPs are tunable by the holes' size and shape. SSPs exist both above and below the light line, offering two classes of applications: "perfect" far-field absorption and efficient emission into guided modes. It is experimentally shown that these plasmonlike modes can turn thin, weakly absorbing semiconductor films into perfect absorbers.

Critically coupled surface phonon-polariton excitation in silicon carbide.

We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.